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Issue DateTitleAuthor(s)
2010Low Droop Nonpolar GaN/InGaN Light Emitting Diode Grown on m-Plane GaN SubstrateChang, Shih-Pang; Lu, Tien-Chang; Zhuo, Li-Fu; Jang, Chung-Ying; Lin, Da-Wei; Yang, Hung-Chih; Kuo, Hao-Chung; Wang, Shing-Chung; 光電工程學系; Department of Photonics
2-Feb-2009Effects of thermal annealing on the emission properties of type-II InAs/GaAsSb quantum dotsLiao, Yu-An; Hsu, Wei-Ting; Chiu, Pei-Chin; Chyi, Jen-Inn; Chang, Wen-Hao; 電子物理學系; Department of Electrophysics
1-Dec-2009Shape dependent carrier dynamics in InAs/GaAs nanostructuresLin, C. H.; Ling, H. S.; Su, S. K.; Lin, S. D.; Lee, C. P.; Sun, K. W.; 應用化學系; 電子工程學系及電子研究所; Department of Applied Chemistry; Department of Electronics Engineering and Institute of Electronics
3-Aug-2009Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxyChao, C. L.; Chiu, C. H.; Lee, Y. J.; Kuo, H. C.; Liu, Po-Chun; Tsay, Jeng Dar; Cheng, S. J.; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
15-Mar-2009Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositionsChiu, C. H.; Kuo, S. Y.; Lo, M. H.; Ke, C. C.; Wang, T. C.; Lee, Y. T.; Kuo, H. C.; Lu, T. C.; Wang, S. C.; 光電工程學系; Department of Photonics
22-Jun-2009Nanorod epitaxial lateral overgrowth of a-plane GaN with low dislocation densityLing, Shih-Chun; Chao, Chu-Li; Chen, Jun-Rong; Liu, Po-Chun; Ko, Tsung-Shine; Lu, Tien-Chang; Kuo, Hao-Chung; Wang, Shing-Chung; Cheng, Shun-Jen; Tsay, Jenq-Dar; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
22-Mar-2010Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diodeLin, Shih-Yen; Tseng, Chi-Che; Lin, Wei-Hsun; Mai, Shu-Cheng; Wu, Shung-Yi; Chen, Shu-Han; Chyi, Jen-Inn; 光電工程學系; Department of Photonics