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Issue DateTitleAuthor(s)
2-Feb-2009Effects of thermal annealing on the emission properties of type-II InAs/GaAsSb quantum dotsLiao, Yu-An; Hsu, Wei-Ting; Chiu, Pei-Chin; Chyi, Jen-Inn; Chang, Wen-Hao; 電子物理學系; Department of Electrophysics
1-Dec-2009Shape dependent carrier dynamics in InAs/GaAs nanostructuresLin, C. H.; Ling, H. S.; Su, S. K.; Lin, S. D.; Lee, C. P.; Sun, K. W.; 應用化學系; 電子工程學系及電子研究所; Department of Applied Chemistry; Department of Electronics Engineering and Institute of Electronics
3-Aug-2009Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxyChao, C. L.; Chiu, C. H.; Lee, Y. J.; Kuo, H. C.; Liu, Po-Chun; Tsay, Jeng Dar; Cheng, S. J.; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
9-Feb-2009Large vacuum Rabi splitting in ZnO-based hybrid microcavities observed at room temperatureChen, Jun-Rong; Lu, Tien-Chang; Wu, Yung-Chi; Lin, Shiang-Chi; Liu, Wei-Rein; Hsieh, Wen-Feng; Kuo, Chien-Cheng; Lee, Cheng-Chung; 光電工程學系; Department of Photonics
9-Feb-2009Size-dependent strain relaxation in InN islands grown on GaN by metalorganic chemical vapor depositionTsai, Wen-Che; Lin, Feng-Yi; Ke, Wen-Cheng; Lu, Shu-Kai; Cheng, Shun-Jen; Chou, Wu-Ching; Chen, Wei-Kuo; Lee, Ming-Chih; Chang, Wen-Hao; 電子物理學系; Department of Electrophysics
27-Jul-2009High efficiency light emitting diode with anisotropically etched GaN-sapphire interfaceLo, M. H.; Tu, P. M.; Wang, C. H.; Hung, C. W.; Hsu, S. C.; Cheng, Y. J.; Kuo, H. C.; Zan, H. W.; Wang, S. C.; Chang, C. Y.; Huang, S. C.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
23-Nov-2009Defect selective passivation in GaN epitaxial growth and its application to light emitting diodesLo, M. -H.; Tu, P. -M.; Wang, C. -H.; Cheng, Y. -J.; Hung, C. -W.; Hsu, S. -C.; Kuo, H. -C.; Zan, H. -W.; Wang, S. -C.; Chang, C. -Y.; Liu, C. -M.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
2009Improved Performance of InGaN-GaN Light-Emitting Diode by a Periodic n-Bowl Mirror ArrayLiao, Cheng; Wu, YewChung Sermon; 材料科學與工程學系; Department of Materials Science and Engineering
23-Mar-2009Directional light extraction enhancement from GaN-based film-transferred photonic crystal light-emitting diodesLai, Chun-Feng; Chao, Chia-Hsin; Kuo, Hao-Chung; Yen, His-Hsuan; Lee, Chia-En; Yeh, Wen-Yung; 光電工程學系; Department of Photonics
15-Mar-2009Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositionsChiu, C. H.; Kuo, S. Y.; Lo, M. H.; Ke, C. C.; Wang, T. C.; Lee, Y. T.; Kuo, H. C.; Lu, T. C.; Wang, S. C.; 光電工程學系; Department of Photonics