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Issue DateTitleAuthor(s)
1-Aug-2009A New Three-Dimensional Capacitor Model for Accurate Simulation of Parasitic Capacitances in Nanoscale MOSFETsGuo, Jyh-Chyurn; Yeh, Chih-Ting; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2006High work function IrxSi gates on HfAlON p-MOSFETsWu, CH; Yu, DS; Chin, A; Wang, SJ; Li, MF; Zhu, C; Hung, BE; McAlister, SP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2015Impact of Inner Pickup on ESD Robustness of Multifinger MOSFET in 28-nm High-k/Metal Gate CMOS ProcessLin, Chun-Yu; Chang, Pin-Hsin; Chang, Rong-Kun; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010Characterization of Highly Strained nFET Device Performance and Channel Mobility with SMTLu, Chih-Cheng; Huang, Jiun-Jia; Luo, Wun-Cheng; Hou, Tuo-Hung; Lei, Tan-Fu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2007A constant-mobility method to enable MOSFET series-resistance extractionLin, Da-Wen; Cheng, Ming-Lung; Wang, Shyh-Wei; Wu, Chung-Cheng; Chen, Ming-Jer; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2008A millisecond-anneal-assisted selective fully silicided (FUSI) gate processLin, Da-Wen; Wang, Maureen; Cheng, Ming-Lung; Sheu, Yi-Ming; Tarng, Bennet; Chu, Che-Min; Nieh, Chun-Wen; Lo, Chia-Ping; Tsai, Wen-Chi; Lin, Rachel; Wang, Shyh-Wei; Cheng, Kuan-Lun; Wu, Chii-Ming; Lei, Ming-Ta; Wu, Chung-Cheng; Diaz, Carlos H.; Chen, Ming-Jer; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2008Impact of process-induced strain on Coulomb scattering mobility in short-channel n-MOSFETsChen, William P. N.; Su, Pin; Goto, K.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2007Temperature-oriented experiment and simulation as corroborating evidence of MOSFET backscattering theoryChen, Ming-Jer; Yan, Shih-Guei; Chen, Rong-Ting; Hsieh, Chen-Yu; Huang, Pin-Wei; Chen, Han-Ping; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2006HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicideWu, CH; Hung, BF; Chin, A; Wang, SJ; Yen, FY; Hou, YT; Jin, Y; Tao, HJ; Chen, SC; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2008Thermal stability and electrical characteristics of tungsten nitride gates in metal-oxide-semiconductor devicesHuang, Chih-Feng; Tsui, Bing-Yue; Lu, Chih-Hsun; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics