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Issue DateTitleAuthor(s)
1-Feb-2012Improved Output Power of InGaN-Based Ultraviolet LEDs Using a Heavily Si-Doped GaN Insertion Layer TechniqueChiu, Ching-Hsueh; Lin, Chien-Chung; Tu, Po-Min; Huang, Shih-Cheng; Tu, Chia-Cheng; Li, Jin-Chai; Li, Zhen-Yu; Uen, Wu-Yih; Zan, Hsiao-Wen; Lu, Tien-Chang; Kuo, Hao-Chung; Wang, Shing-Chung; Chang, Chun-Yen; 光電系統研究所; 電子工程學系及電子研究所; 光電工程學系; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-Jun-2008Fabrication of whitely luminescent silicon-rich nitride films by atmospheric pressure chemical vapor depositionLin, Chia-Hung; Uen, Wu-Yih; Huang, Yen-Chin; Li, Zhen-Yu; Liao, Sen-Mao; Yang, Tsun-Neng; Lan, Shan-Ming; Huang, Yu-Hsiang; 光電工程學系; Department of Photonics
1-May-2015Characteristics of the epitaxy of InGaN-based light-emitting diodes grown by nanoscale epitaxial lateral overgrowth using a nitrided titanium buffer layerShieh, Chen-Yu; Li, Zhen-Yu; Chang, Jenq-Yang; Chi, Gou-Chung; 光電工程學系; Department of Photonics
1-Nov-2011Characteristics of Current-Injected GaN-Based Vertical-Cavity Surface-Emitting LasersLu, Tien-Chang; Wu, Tzeng-Tsong; Chen, Shih-Wei; Tu, Po-Min; Li, Zhen-Yu; Chen, Chien-Kang; Chen, Cheng-Hung; Kuo, Hao-Chung; Wang, Shing-Chung; Zan, Hsiao-Wen; Chang, Chun-Yen; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-Jan-2009Carrier localization degree of In(0.2)Ga(0.8)N/GaN multiple quantum wells grown on vicinal sapphire substratesLi, Zhen-Yu; Lo, Ming-Hua; Chiu, Ching-Hua; Lin, Po-Chun; Lu, Tien-Chang; Kuo, Hao-Chung; Wang, Shing-Chung; 光電工程學系; Department of Photonics
1-Jan-2009Enhancing the Emission Efficiency of In(0.2)Ga(0.8)N/GaN MQW Blue LED by Using Appropriately Misoriented Sapphire SubstratesLi, Zhen-Yu; Uen, Wu-Yih; Lo, Ming-Hua; Chiu, Ching-Hua; Lin, Po-Chun; Hung, Chih-Tsang; Lu, Tien-Chang; Kuo, Hao-Chung; Wang, Shing-Chung; Huang, Yen-Chin; 光電工程學系; Department of Photonics
2010Improvement in Crystalline Quality of InGaN-Based Epilayer on Sapphire via Nanoscaled Epitaxial Lateral OvergrowthChiu, Ching-Hsueh; Lin, Da-Wei; Li, Zhen-Yu; Chiu, Chin-Hua; Chao, Chu-Li; Tu, Chia-Cheng; Kuo, Hao-Chung; Lu, Tien-Chang; Wang, Shing-Chung; 光電工程學系; Department of Photonics
1-Mar-2009Luminescence mechanisms of silicon-rich nitride films fabricated by atmospheric pressure chemical vapor deposition in N(2) and H(2) atmospheresLin, Chia-Hung; Uen, Wu-Yih; Lan, Shan-Ming; Huang, Yen-Chin; Liao, Sen-Mao; Li, Zhen-Yu; Yang, Tsun-Neng; Ku, Chien-Te; Chen, Meng-Chu; Huang, Yu-Hsiang; 光電工程學系; Department of Photonics
1-Jul-2011Highly Efficient and Bright LEDs Overgrown on GaN Nanopillar SubstratesChiu, Ching-Hsueh; Tu, Po-Min; Lin, Chien-Chung; Lin, Da-Wei; Li, Zhen-Yu; Chuang, Kai-Lin; Chang, Jet-Rung; Lu, Tien-Chang; Zan, Hsiao-Wen; Chen, Chiang-Yao; Kuo, Hao-Chung; Wang, Shing-Chung; Chang, Chun-Yen; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
May-2016Non-thermal alloyed ohmic contact process of GaN-based HEMTs by pulsed laser annealingTzou, An-Jye; Hsieh, Dan-Hua; Chen, Szu-Hung; Li, Zhen-Yu; Chang, Chun-Yen; Kuo, Hao-Chung; 電子物理學系; 電機學院; 光電工程學系; Department of Electrophysics; College of Electrical and Computer Engineering; Department of Photonics