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Issue DateTitleAuthor(s)
1978SPECIFIC CONTACT RESISTANCE OF NI-AU-GE-NGAP SYSTEMLEI, TF; LEE, CL; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1980A DOUBLE POLE, DOUBLE THROW ELECTRO-OPTIC SWITCH WITH AN N-TYPE ELECTRODELEE, CL; HUANG, JY; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
1-Oct-1994THE COMBINED EFFECTS OF LOW-PRESSURE NH3-ANNEALING AND H-2 PLASMA HYDROGENATION ON POLYSILICON THIN-FILM TRANSISTORSYANG, CK; LEI, TF; LEE, CL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-1994MULTIPLE-ANGLE INCIDENT ELLIPSOMETRY MEASUREMENT ON LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON AND POLYSILICONCHAO, TS; LEE, CL; LEI, TF; 電子工程學系及電子研究所; 奈米中心; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-Jun-1989A SWITCHING DEVICE OF A PN JUNCTION STRUCTURE WITH 2 LAYERS OF THIN OXIDECHANG, DCY; LEE, CL; LEI, TF; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
1-Nov-1995POST-POLYSILICON GATE-PROCESS-INDUCED DEGRADATION ON THIN GATE OXIDELAI, CS; LEI, TF; LEE, CL; CHAO, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-1995ENHANCED H-2-PLASMA EFFECTS ON POLYSILICON THIN-FILM TRANSISTORS WITH THIN ONO GATE-DIELECTRICSYANG, CK; LEE, CL; LEI, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-1993CHARACTERIZATION OF SEMIINSULATING POLYCRYSTALLINE SILICON PREPARED BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITIONCHAO, TS; LEE, CL; LEI, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
24-Jun-1993THICKNESS DETERMINATION OF POLY-SI/POLY-OXIDE POLY-SI/SIO2/SI STRUCTURE BY ELLIPSOMETERCHAO, TS; LEE, CL; LEI, TF; 電控工程研究所; Institute of Electrical and Control Engineering
1-Apr-1993SEESIM - A FAST SYNCHRONOUS SEQUENTIAL-CIRCUIT FAULT SIMULATOR WITH SINGLE-EVENT EQUIVALENCEWU, CP; LEE, CL; SHEN, WZ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics