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Issue DateTitleAuthor(s)
2010Output Power of AlGaInP Light Emitting Diode Improved by Double Roughening AlGaInP SurfacesHuang, Ping-Wei; Wu, YewChung Sermon; 材料科學與工程學系; Department of Materials Science and Engineering
2010The Roles of Threading Dislocations on Electrical Properties of AlGaN/GaN Heterostructure Grown by MBEWong, Yuen-Yee; Chang, Edward Yi; Yang, Tsung-Hsi; Chang, Jet-Rung; Ku, Jui-Tai; Hudait, Mantu K.; Chou, Wu-Ching; Chen, Micheal; Lin, Kung-Liang; 材料科學與工程學系; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
2010Low Droop Nonpolar GaN/InGaN Light Emitting Diode Grown on m-Plane GaN SubstrateChang, Shih-Pang; Lu, Tien-Chang; Zhuo, Li-Fu; Jang, Chung-Ying; Lin, Da-Wei; Yang, Hung-Chih; Kuo, Hao-Chung; Wang, Shing-Chung; 光電工程學系; Department of Photonics
1-Nov-2008The transition mechanisms of a ten-period InAs/GaAs quantum-dot infrared photodetectorTseng, Chi-Che; Chou, Shu-Ting; Lin, Shin-Yen; Chen, Cheng-Nan; Lin, Wei-Hsun; Chen, Yi-Hao; Chung, Tung-Hsun; Wu, Meng-Chyi; 光電工程學系; Department of Photonics
2-Feb-2009Effects of thermal annealing on the emission properties of type-II InAs/GaAsSb quantum dotsLiao, Yu-An; Hsu, Wei-Ting; Chiu, Pei-Chin; Chyi, Jen-Inn; Chang, Wen-Hao; 電子物理學系; Department of Electrophysics
15-Mar-2009Influence of thermal annealing on the electron emission of InAs quantum dots containing a misfit defect stateChen, J. F.; Yang, C. H.; Hsu, R. M.; Wang, U. S.; 電子物理學系; Department of Electrophysics
15-Jan-2009Free carrier dynamics of InN nanorods investigated by time-resolved terahertz spectroscopyAhn, H.; Chuang, C. -H.; Ku, Y. -P.; Pan, C. -L.; 光電工程學系; Department of Photonics
1-Dec-2009Shape dependent carrier dynamics in InAs/GaAs nanostructuresLin, C. H.; Ling, H. S.; Su, S. K.; Lin, S. D.; Lee, C. P.; Sun, K. W.; 應用化學系; 電子工程學系及電子研究所; Department of Applied Chemistry; Department of Electronics Engineering and Institute of Electronics
15-Sep-2010Characteristics of emission polarization in a-plane nanorods embedded with InGaN/GaN multiple quantum wellsLi, J. C.; Lu, T. C.; Huang, H. M.; Chan, W. W.; Kuo, H. C.; Wang, S. C.; 光電工程學系; Department of Photonics
3-Aug-2009Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxyChao, C. L.; Chiu, C. H.; Lee, Y. J.; Kuo, H. C.; Liu, Po-Chun; Tsay, Jeng Dar; Cheng, S. J.; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics