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Issue DateTitleAuthor(s)
1-Oct-2009Numerical calculation of the reflectance of sub-wavelength structures on silicon nitride for solar cell applicationSahoo, Kartika Chandra; Li, Yiming; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Oct-2009460-nm InGaN-Based LEDs Grown on Fully Inclined Hemisphere-Shape-Patterned Sapphire Substrate With Submicrometer SpacingChang, Chia-Ta; Hsiao, Shih-Kuang; Chang, Edward Yi; Hsiao, Yu-Lin; Huang, Jui-Chien; Lu, Chung-Yu; Chang, Huang-Choung; Cheng, Kai-Wen; Lee, Ching-Ting; 材料科學與工程學系; Department of Materials Science and Engineering
2010The Roles of Threading Dislocations on Electrical Properties of AlGaN/GaN Heterostructure Grown by MBEWong, Yuen-Yee; Chang, Edward Yi; Yang, Tsung-Hsi; Chang, Jet-Rung; Ku, Jui-Tai; Hudait, Mantu K.; Chou, Wu-Ching; Chen, Micheal; Lin, Kung-Liang; 材料科學與工程學系; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
1-Dec-2015Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap DensityLuc, Quang Ho; Do, Huy Binh; Ha, Minh Thien Huu; Hu, Chenming Calvin; Lin, Yueh Chin; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Jan-2015Potential of Enhancement Mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for Using in High-Speed and Low-Power Logic ApplicationsFatah, Faiz Aizad; Lin, Yueh-Chin; Lee, Tsung-Yun; Yang, Kai-Chun; Liu, Ren-Xuan; Chan, Jing-Ray; Hsu, Heng-Tung; Miyamoto, Yasuyuki; Chang, Edward Yi; 材料科學與工程學系; 照明與能源光電研究所; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Institute of Lighting and Energy Photonics; Department of Electronics Engineering and Institute of Electronics
8-Jan-2016Demonstrating 1 nm-oxide-equivalent-thickness La2O3 and HfO2 multi-layer composite oxides on In0.53Ga0.47As MOS capacitorWu, Wen-Hao; Lin, Yueh-Chin; Hou, Tzu-Ching; Lin, Tai-Wei; Hsu, Hisang-Hua; Wong, Yuen-Yee; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 影像與生醫光電研究所; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Imaging and Biomedical Photonics
1-Dec-2015Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-StackHuy Binh Do; Quang Ho Luc; Minh Thien Huu Ha; Hu, Chenming Calvin; Lin, Yueh Chin; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Dec-2006New Cu/Mo/Ge/Pd ohmic contacts on highly doped n-GaAs for InGaP/GaAs heterojunction bipolar transistorsChang, Chun-Wei; Hseh, Tung-Ling; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
1-Dec-2015GaN High-Electron-Mobility Transistor with WNx/Cu Gate for High-Power ApplicationsHsieh, Ting-En; Lin, Yueh-Chin; Li, Fang-Ming; Shi, Wang-Cheng; Huang, Yu-Xiang; Lan, Wei-Cheng; Chin, Ping-Chieh; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics
1-Dec-2015The reliability study of III-V solar cell with copper based contactsHsu, Ching-Hsiang; Chang, Edward Yi; Chang, Hsun-Jui; Maa, Jer-Shen; Pande, Krishna; 材料科學與工程學系; 照明與能源光電研究所; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Institute of Lighting and Energy Photonics; Department of Electronics Engineering and Institute of Electronics