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Issue DateTitleAuthor(s)
8-Jan-1998Suppression of boron penetration in p(+) polysilicon gate using Si-B diffusion sourceChao, TS; Kuo, CP; Lei, TF; Chen, TP; Huang, TY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1998Catalytic decomposition of ozone in the presence of water vaporTsai, WT; Chang, CY; Jung, FH; Chiu, CY; Huang, WH; Yu, YH; Liou, HT; Ku, Y; Chen, JN; Mao, CF; 環境工程研究所; Institute of Environmental Engineering
1-Mar-2000High performance 0.1 mu m dynamic threshold MOSFET using indium channel implantationChang, SJ; Chang, CY; Chao, TS; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2000CMOS RFIC: Application to wireless transceiver designWen, KA; Wuen, WS; Huang, GW; Chen, LP; Chen, KY; Liu, SF; Chen, ZS; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-1999A novel lightly doped drain polysilicon thin-film transistor with oxide sidewall spacer formed by one-step selective liquid phase depositionShih, PS; Chang, CY; Chang, TC; Huang, TY; Peng, DZ; Yeh, CF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2000Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxidesChen, CC; Lin, HC; Chang, CY; Huang, TY; Chien, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2000Plasma-induced charging damage in ultrathin (3-nm) gate oxidesChen, CC; Lin, HC; Chang, CY; Liang, MS; Chien, CH; Hsien, SK; Huang, TY; Chao, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Aug-2000Study on Ge/Si ratio, silicidation, and strain relaxation of high temperature sputtered Co/Si1-xGex structuresHuang, HJ; Chen, KM; Chang, CY; Huang, TY; Chen, LP; Huang, GW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2000Plasma-process-induced damage in sputtered TiN metal-gate capacitors with ultrathin nitrided oxidesChen, CC; Lin, HC; Chang, CY; Chao, TS; Huang, TY; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Hot-electron-induced electron trapping in 0.13 mu m nMOSFETs with ultrathin (EOT=1.6 nm) nitrided gate oxideChen, CW; Chien, CH; Perng, TH; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics