Application of Simultaneous Partial Nitrification and Anammox Process for Treatment of High Strength Nitrogen Containing Opto-electronic
|Keywords:||厭氧氨氧化;部分硝化;光電廢水;Anammox;partial nitrification;opto-electronic wastewater|
|Abstract:||本研究將部分硝化與厭氧氨氧化程序結合於單一反應槽內並針對處理兩股含有高濃度氮氮之光電廢水進行探討。此兩股光電廢水之主要特性略有不同，其分別為僅具有高濃度氨氮 (WW1) 與碳氮比為0.2 (WW2) 之廢水。為強化培養厭氧氨氧化菌之生長本研究於進流廢水中添加營養鹽與微量元素。WW1與WW2分別以18 L與2.5 L的序批次反應槽 (SBR-18 ＆ SBR-2.5) 進行處理，並在16個月的實驗期間逐漸提升氮負荷。實驗結果顯示於SBR-18反應槽的最後階段總氮負荷最高可達到909 g -N m-3 d-1且平均總氮去除效率可達90% 並持續維持1個月。而在SBR-2.5反應槽中的最後階段，總氮負荷與COD負荷最高分別可達到428 g-N m-3 d-1與89 g-COD m-3 d-1且平均總氮去除效率與COD去除效率分別可達93% 與79%。最後藉由聚合酵素鏈鎖反應 (PCR) 之菌相鑑定進一步證實了SBR內共同存在了氨氧化菌與厭氧氨氧化菌且Candidatus Kuenenia stuttgartiensis為主要菌種之一。|
Treatment of two optoelectronic industrial wastewaters (wastewater containing high ammonium concentration (WW1) and wastewater with C/N ratio of 0.2 (WW2)) were achieved using partial nitrification and Anammox processes in a single reactors. 18 L and 2.5 L lab scale sequencing batch reactors (SBR) were used to treat WW1 and WW2, respectively. Essential nutrients and trace elements were added in the influent wastewaters to support the Anammox growth. 18 L SBR (SBR-18) and 2.5 L SBR (SBR-2.5) were run for over 16 months in different stages. Nitrogen loading rate (NLR) was gradually increased from 10 g-N m-3 d-1 to 909 g-N m-3 d-1 and 16 g-N m-3 d-1 to 230 g-N m-3 d-1 in SBR-18 and SBR-2.5, respectively. The SBR-18 was successfully run about 1 month (7 times of HRT) to treat WW1 without dilution i.e NLR of 0.9 g-N m-3 d-1. The average TN removal was 90% in the high NLR in SBR-18. In the case of SBR-2.5, the system successfully treated 89 g-COD m-3 d-1 and 428 g g-N m-3 d-1, respectively, with 79% and 93% of COD and TN removal efficiencies in later stages. Presence of ammonia oxidizing bacteria (AOB) and Anammox bacteria were confirmed by polymerase chain reaction (PCR) in the SBRs. PCR results also indicated that Candidatus Kuenenia stuttgartiensis was one of the dominant species in both SBRs.
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