標題: Resonant rutherford backscattering studies of cerium oxide thin films deposited by RF sputtering
作者: Chin, CC
Lin, RJ
Yu, YC
Wang, CW
Lin, EK
Tsai, WC
Tseng, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-六月-1997
摘要: We have studied the stoichiometry of cerium oxide films deposited by RF sputtering on sapphire and MgO as a function of deposition conditions using the resonant Rutherford backscattering method. We found that some films have the off-stoichiometry of CeOy with y greater than 2.0. Such an off-stoichiometry cannot be due to a mixture of the known phases of bulk cerium oxide samples. This may be due to either cerium vacancies or interstitial oxygen atomic impurities. The cerium ion x-ray photoemission spectra of those films cannot determine the vacancy of the cerium ions. The c-axis YBaCuo thin flims deposited by sputtering on the CeO3.3 buffer layer on saphhire was found to be epitaxial. The T-c was 86 K with Delta T-c less than 1 K.
URI: http://hdl.handle.net/11536/496
ISSN: 1051-8223
期刊: IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
Volume: 7
Issue: 2
起始頁: 1403
結束頁: 1406
顯示於類別:會議論文


文件中的檔案:

  1. A1997XH86600072.pdf