The Investigation on the Selenization of Various Crystallinity Selenium Films Deposited by APPECVD on Stacked Metal Precursor
|關鍵字:||銅銦鎵硒;太陽能電也;硒化;快速熱處理過程;堆疊金屬前驅物;Cu(In,Ga)Se2;Solar Cell;Selenization;Rapid thermal process;Stacked metal precursor|
In this paper, we used the APPECVD system to deposit the selenium films on the Mo/SLG substrate. The APPECVD is a non-vacuum system and has the similar ability of large area of sputtering. And it has smaller amount of Se material which can be used than co-evaporation system does. In this work, we presented the RTP process as selenization process, which can decrease depletion of In2Se and is able to accelerate fabrication. We investigated the plasma power and substrate temperature for affecting surface morphology, roughness, structure and composition during the time before and after selenization. We were expecting the degree of crystalline chalcopyrite structure of CIGS films could be improved by radical Se and then so is conversion efficiency of device. Afterwards, we completed solar cell, and its structure is composed by Al/ITO/ZnO/CdS/CIGS/Mo/SLG, which area is 0.48 cm2. The electric properties of CIGS solar cell were measured by I-V curve measurement system with Solar Spectral Irradiance: AM1.5G and extra quantum efficiency. The highest conversion efficiencies of solar cell device without plasma and with plasma are respectively 4.694% and 5.031% at the substrate temperature is 45℃. The conversion efficiency of solar cell device with plasma while power is 50W is 2.266% at the substrate temperature is 45℃. The conversion efficiency of solar cell device with plasma while power is 50W is 6.103% at the substrate temperature is 125℃, which FF=0.428, Voc=0.41V and Jsc=34.815 mA/cm2. In our final study, we completed to deposit selenium thin films of different crystallization on stacked metal precursor and form chalcopyrite structure of Cu(In,Ga)Se2 thin films. Consequently, Cu(In,Ga)Se2 thin films enabled us to fabricate the solar cell device. The effect of plasma enhances the crystallization of chalcopyrite structure of Cu(In,Ga)Se2 thin films. The effect of substrate temperature raised the band gap of Cu(In,Ga)Se2 thin films. According to the above-mentioned, those two effects can improve the conversion efficiency of solar cell device and reduce the costs by APPECVD.
|Appears in Collections:||Thesis|
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