Title: A NEW DYNAMIC RANDOM-ACCESS MEMORY CELL USING A BIPOLAR MOS COMPOSITE STRUCTURE
Authors: WU, CY
交大名義發表
電控工程研究所
National Chiao Tung University
Institute of Electrical and Control Engineering
Issue Date: 1983
URI: http://hdl.handle.net/11536/4904
ISSN: 0018-9383
Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 30
Issue: 8
Begin Page: 886
End Page: 894
Appears in Collections:Articles


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  1. A1983RE35800004.pdf