標題: Suppression of boron penetration by using inductive-coupling-nitrogen-plasma in stacked amorphous/polysilicon gate structure
作者: Yang, WL
Lin, CJ
Chao, TS
Liu, DG
Lei, TF
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
關鍵字: MOS integrated circuits;plasma
公開日期: 19-六月-1997
摘要: A method is introduced for suppressing the penetration of boron for BF2+-implanted pMOS devices with a stacked amorphous/ poly-Si (SAP) gate structure. It is shown that after inductive-coupling-nitrogen-plasma (ICNP) treatment, boron diffusion through the thin gale oxide is largely suppressed. As shown from the charge-to-breakdown measurements, the ICNP process will improve the quality of pMOS devices, with Q(bd) three times higher than for the control samples.
URI: http://hdl.handle.net/11536/488
ISSN: 0013-5194
期刊: ELECTRONICS LETTERS
Volume: 33
Issue: 13
起始頁: 1139
結束頁: 1140
顯示於類別:期刊論文


文件中的檔案:

  1. 000072040900027.pdf