標題: Strong ultraviolet emission from InGaN/AlGaN multiple quantum well grown by multi-step process
作者: Chen, Hou-Guang
Hsu, Nai-Fang
Chu, Jung-Tang
Yao, Hsin-Hung
Lu, Tien-Chang
Kuo, Hao-Chung
Wang, Shing-Chung
光電工程學系
Department of Photonics
關鍵字: InN;InGaN;multiple quantum wells;CL;LED
公開日期: 1-四月-2007
摘要: We propose a method of realizing strong ultraviolet emission from InGaN/AlGaN multiple quantum wells (MQWs) grown by a multi-step process. During growth of the quantum well layer, only trimethylindium (TMIn) and ammonia were introduced into the reactor, followed by a growth interruption treatment before growth of AlGaN barriers. The growth temperature of QWs dominates the photoluminescence (PL) emission peak position and surface morphologies of the films. It was found that the PL spectra of the samples with MQWs grown at 685 degrees C showed a strong UV emission at 380 nm. The correlation between surface structures and optical characteristics was studied by cathodoluminescence microscopy. The electroluminescence spectra under various injection currents showed a weak carrier localization effect induced by a quantum-confined Stark effect in the MQW.
URI: http://dx.doi.org/10.1143/JJAP.46.2574
http://hdl.handle.net/11536/4872
ISSN: 0021-4922
DOI: 10.1143/JJAP.46.2574
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 46
Issue: 4B
起始頁: 2574
結束頁: 2577
顯示於類別:會議論文


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