標題: Improved flash cell performance by N2O annealing of interpoly oxide
作者: Jong, FC
Huang, TY
Chao, TS
Lin, HC
Leu, LY
Young, K
Lin, CH
Chiu, KY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-七月-1997
摘要: In this letter, we report the effects of N2O annealing of interpoly oxide on flash cell performance. It is demonstrated that by adding an N2O anneal after interpoly oxide formation, improved cycling endurance is achieved, The program and erase efficiencies are also improved significantly, compared to the control cell without N2O anneal. The cells with N2O anneal show higher cell current (i.e., drain current), which can be ascribed to a lower threshold voltage and higher transconductance, compared to the control cell.
URI: http://dx.doi.org/10.1109/55.596931
http://hdl.handle.net/11536/484
ISSN: 0741-3106
DOI: 10.1109/55.596931
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 18
Issue: 7
起始頁: 343
結束頁: 345
顯示於類別:期刊論文


文件中的檔案:

  1. A1997XG99700012.pdf