Title: Characterization of RF lateral-diffused metal-oxide-semiconductor field-effect transistors with different layout structures
Authors: Hu, Hsin-Hui
Chen, Kun-Ming
Huang, Guo-Wei
Chang, Chun-Yen
Lu, Yii-Chian
Yang, Yu-Chi
Cheng, Eric
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: LDMOS;layout structure;self-heating effect;pulsed RE characteristics
Issue Date: 1-Apr-2007
Abstract: The DC and RF characteristics of lateral-diffused metal-oxide-semi conductor (LDMOS) transistors with different layout structures were studied. The devices were fabricated using a 0.5 mu m LDMOS process. The ring and fishbone structures, which are used widely in power devices, were designed and analyzed. We found that the. transconductance, on-resistance, cutoff frequency and maximum oscillation frequency were improved using the ring structure, due to a larger equivalent W/L and lower drain parasitic resistance. In addition, the self-heating effect of LDMOS transistors was also investigated by measuring the pulsed current-voltage (I-V) and pulsed RF characteristics. From the measured results, the ring structure appeared to be a better layout design for RF LDMOS transistors.
URI: http://dx.doi.org/10.1143/JJAP.46.2032
http://hdl.handle.net/11536/4839
ISSN: 0021-4922
DOI: 10.1143/JJAP.46.2032
Journal: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 46
Issue: 4B
Begin Page: 2032
End Page: 2036
Appears in Collections:Conferences Paper


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