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dc.contributor.authorWU, CYen_US
dc.contributor.authorHSU, KCen_US
dc.date.accessioned2014-12-08T15:06:13Z-
dc.date.available2014-12-08T15:06:13Z-
dc.date.issued1985-12-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/11536/4790-
dc.language.isoen_USen_US
dc.titleA NEW THRESHOLD-VOLTAGE MODEL FOR SMALL-GEOMETRY BURIED-CHANNEL MOSFETSen_US
dc.typeArticleen_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume28en_US
dc.citation.issue12en_US
dc.citation.spage1283en_US
dc.citation.epage1289en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1985AXH4700016-
dc.citation.woscount6-
Appears in Collections:Articles