標題: 可應用於太陽能電池之奈米結晶矽量子點埋入式摻鋁氧化鋅薄膜與p型氧化鋅薄膜之特性研究
Characteristics of the Nano-crystalline Si Quantum Dots Embedded in the Al-doped ZnO Thin Films and the p-type ZnO Thin Films for Solar Cell Applications
作者: 莊文齡
Chuang, Wen-Ling
李柏璁
Lee, Po-Tsung
光電工程學系
關鍵字: 太陽能電池;全矽材料串接太陽能電池;矽奈米結晶量子點薄膜;摻鋁氧化鋅;p型氧化鋅;氧化鋅p-n同質接面;solar cell;all Si-based tandem solar cell;nano-crystalline Si quantum dot thin film;Al-doped ZnO;p-type ZnO;ZnO p-n homojunction
公開日期: 2010
摘要: 為了達到高效率、低成本的太陽能電池,全矽材料串接太陽能電池是很有潛力的。將不同能隙之矽奈米結晶量子點薄膜堆疊可減少高能量光子的損耗,以提高效率。一般,大部分的實驗室會將矽奈米結晶埋在SiO2、Si3N4或SiC的材料中,但這些材料的導電性不好,造成此結構所形成之太陽能電池的效率比理論上低。為了改善此問題,我們提出將導電性較好的摻鋁氧化鋅材料應用在矽奈米結晶量子點薄膜中。 我們分析不同鋁含量對矽奈米結晶量子點薄膜的影響。當鋁的含量增加,奈米結晶矽量子點的大小和矽結晶率會減少。鋁的摻雜會抑制矽的成長。而矽奈米結晶量子點薄膜的導電性會隨著鋁含量增加而增加。但太粗糙的表面型態會使導電性減少。在多層薄膜與矽基板界面處的氧化矽和退火完的薄膜彎曲等兩個問題尚須解決。 為了解決界面氧化矽的問題,我們發展p型氧化鋅薄膜來取代矽基板。樣品在適當的氮流量、工作壓力和退火條件製程下會具有p型特性。我們演示了氧化鋅p-n同質接面並具有二極體的整流現象。 矽奈米結晶量子點埋入摻鋁氧化鋅薄膜的裝置成功演示出。若未來可解決界面氧化層和退火完薄膜彎曲的問題,此裝置將有潛力應用於太陽能電池中。
In order to achieve high efficiency and low cost solar cells, all silicon-based tandem solar cells including the nano-crystalline silicon (nc-Si) quantum dots (QDs) are proposed. The nc-Si QD thin films stacking with different bandgaps can reduce the high energy photon loss, so the efficiency can be improved. In general, most groups will embed nc-Si QDs in the Si-based materials, such as SiO2, Si3N4, and SiC. Because of poor conductivity of these materials, the efficiency is still substantially lower than the theoretical value. In this study, we propose to embed nc-Si QDs in the Al-doped ZnO (AZO) matrix. We study the effect of the Al concentration on the nc-Si QD thin films. As the Al concentration increases, the nc-Si QD size and Si crystallinity decrease. The addition of Al suppresses the growth of Si. The conductivity of the nc-Si QD thin films increases with the increase of the Al concentration. However, the rougher surface morphology possibly causes the conductivity to decrease. The silicon oxide layer between the multilayer thin film and the Si substrate and the bending films after annealing are two problems need to be solved. In order to solve the silicon oxide layer at the interface, we develop the p-type N-doped ZnO thin films to replace the Si substrates. The samples with suitable N2 flow, working pressure, and annealing conditions show the p-type properties. We demonstrate the ZnO p-n homojunction and examine the device has a diodelike rectification characteristic. The device of the nc-Si QDs embedded in the AZO matrix has been demonstrated. If we solve the silicon oxide layer at the interface and bending films after annealing in the future, the device is a promising structure for solar cell applications.
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT079824551
http://hdl.handle.net/11536/47575
Appears in Collections:Thesis


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