標題: Rigorous electromagnetic simulation of mask magnification effects on the diffracted light for EUV binary mask
作者: Lin, Chun-Hung
Chen, Hsuen-Li
Ko, Fu-Hsiang
材料科學與工程學系奈米科技碩博班
Graduate Program of Nanotechnology , Department of Materials Science and Engineering
關鍵字: extreme ultraviolet lithography;mask magnification;rigorous coupled-wave analysis
公開日期: 1-May-2007
摘要: Extreme ultraviolet (ELTV) lithography is expected to be the main candidate in the semiconductor manufacturing starting at 32 nm. As the CD is getting smaller, the aspect ratio of the patterns on the ELTV mask is becoming larger. The shadowing effect will become much more significant when keeping the same 4x mask magnification. In this work, mask magnification effects on the diffracted light were explored with rigorous coupled-wave analysis (RCWA) for the sub-32 nm node. The simulated binary mask consists of 70-nm TaBN absorber and 2.5-nm Ru capping layer. The dependences of the diffraction efficiencies on mask pitches were calculated. The impacts of the absorber shadowing were observed from the near field distribution on the EUV mask. The aerial images formed by the diffracted light from the 4x and 8x masks were further evaluated. (c) 2007 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mee.2007.01.010
http://hdl.handle.net/11536/4686
ISSN: 0167-9317
DOI: 10.1016/j.mee.2007.01.010
期刊: MICROELECTRONIC ENGINEERING
Volume: 84
Issue: 5-8
起始頁: 711
結束頁: 715
Appears in Collections:Conferences Paper


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