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dc.contributor.authorWu, Chi-Changen_US
dc.contributor.authorWu, Wen-Faen_US
dc.contributor.authorSu, P. Y.en_US
dc.contributor.authorChen, L. J.en_US
dc.contributor.authorKo, Fu-Hsiangen_US
dc.date.accessioned2014-12-08T15:06:06Z-
dc.date.available2014-12-08T15:06:06Z-
dc.date.issued2007-05-01en_US
dc.identifier.issn0167-9317en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mee.2007.01.198en_US
dc.identifier.urihttp://hdl.handle.net/11536/4674-
dc.description.abstractIn this paper, effects of capping layers on formation and electrical properties of Ni-silicided junctions have been investigated. Nickel silicide films using the Ti or TiN-capped layer process are used to compare to those by the uncapped process. The uncapped (Ni single layer) and TiN-capped samples are shown to exhibit better thermal stability than the Ti-capped samples. For the silicided junctions, samples using Ti capping layer processes exhibit larger leakage current densities. A high-resistivity NiTiSi, compound layer is formed on the surface during silicidation for the Ti-capped sample, while the uncapped and TiN-capped samples are not. In addition, it is found that the thickness of NiSi layer, as well as the Ni,TiySi, layer, increases with increasing the Ti capping layer thickness. The formation of Ni,TiySi, layer not only increases the contact resistance, but also deepens the silicide thickness. (c) 2007 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectnickel silicideen_US
dc.subjectcapping layeren_US
dc.subjectjunction diodeen_US
dc.titleEffects of capping layers on the electrical characteristics of nickel silicided junctionsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.mee.2007.01.198en_US
dc.identifier.journalMICROELECTRONIC ENGINEERINGen_US
dc.citation.volume84en_US
dc.citation.issue5-8en_US
dc.citation.spage1801en_US
dc.citation.epage1805en_US
dc.contributor.department材料科學與工程學系奈米科技碩博班zh_TW
dc.contributor.departmentGraduate Program of Nanotechnology , Department of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000247182500262-
Appears in Collections:Conferences Paper


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