標題: Effects of capping layers on the electrical characteristics of nickel silicided junctions
作者: Wu, Chi-Chang
Wu, Wen-Fa
Su, P. Y.
Chen, L. J.
Ko, Fu-Hsiang
材料科學與工程學系奈米科技碩博班
Graduate Program of Nanotechnology , Department of Materials Science and Engineering
關鍵字: nickel silicide;capping layer;junction diode
公開日期: 1-May-2007
摘要: In this paper, effects of capping layers on formation and electrical properties of Ni-silicided junctions have been investigated. Nickel silicide films using the Ti or TiN-capped layer process are used to compare to those by the uncapped process. The uncapped (Ni single layer) and TiN-capped samples are shown to exhibit better thermal stability than the Ti-capped samples. For the silicided junctions, samples using Ti capping layer processes exhibit larger leakage current densities. A high-resistivity NiTiSi, compound layer is formed on the surface during silicidation for the Ti-capped sample, while the uncapped and TiN-capped samples are not. In addition, it is found that the thickness of NiSi layer, as well as the Ni,TiySi, layer, increases with increasing the Ti capping layer thickness. The formation of Ni,TiySi, layer not only increases the contact resistance, but also deepens the silicide thickness. (c) 2007 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mee.2007.01.198
http://hdl.handle.net/11536/4674
ISSN: 0167-9317
DOI: 10.1016/j.mee.2007.01.198
期刊: MICROELECTRONIC ENGINEERING
Volume: 84
Issue: 5-8
起始頁: 1801
結束頁: 1805
Appears in Collections:Conferences Paper


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