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dc.contributor.authorHUANG, GSen_US
dc.contributor.authorWU, CYen_US
dc.date.accessioned2014-12-08T15:06:04Z-
dc.date.available2014-12-08T15:06:04Z-
dc.date.issued1987-06-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://hdl.handle.net/11536/4639-
dc.language.isoen_USen_US
dc.titleAN ANALYTIC IV MODEL FOR LIGHTLY DOPED DRAIN (LDD) MOSFET DEVICESen_US
dc.typeArticleen_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume34en_US
dc.citation.issue6en_US
dc.citation.spage1311en_US
dc.citation.epage1322en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department工學院zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentCollege of Engineeringen_US
dc.identifier.wosnumberWOS:A1987H779400012-
dc.citation.woscount17-
Appears in Collections:Articles


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