標題: AN ANALYTIC IV MODEL FOR LIGHTLY DOPED DRAIN (LDD) MOSFET DEVICES
作者: HUANG, GS
WU, CY
交大名義發表
工學院
National Chiao Tung University
College of Engineering
公開日期: 1-Jun-1987
URI: http://hdl.handle.net/11536/4639
ISSN: 0018-9383
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 34
Issue: 6
起始頁: 1311
結束頁: 1322
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  1. A1987H779400012.pdf