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dc.contributor.authorHUANG, KFen_US
dc.contributor.authorSHIE, JSen_US
dc.contributor.authorLUO, JJen_US
dc.contributor.authorCHEN, JSen_US
dc.date.accessioned2014-12-08T15:06:03Z-
dc.date.available2014-12-08T15:06:03Z-
dc.date.issued1987-08-03en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://hdl.handle.net/11536/4622-
dc.language.isoen_USen_US
dc.titleELECTRICAL-PROPERTIES OF INSB METAL-INSULATOR SEMICONDUCTOR DIODES PREPARED BY PHOTOCHEMICAL VAPOR-DEPOSITIONen_US
dc.typeArticleen_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume151en_US
dc.citation.issue2en_US
dc.citation.spage145en_US
dc.citation.epage152en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:A1987J704200002-
dc.citation.woscount14-
Appears in Collections:Articles