標題: Preparation of extended microtunnels in GaN by wet chemical etching
作者: Huang, Hsin-Hsiung
Zeng, Hung-Yu
Lee, Wei-I
電子物理學系
Department of Electrophysics
公開日期: 1-Jun-2007
摘要: Extended microtunnels with triangular cross sections are demonstrated in GaN layers on sapphire substrates. The depths of the tunnels can easily reach several hundred micrometers by using wet chemical etching. To obtain this result, patterned growth of specially designed GaN layers is carried out on sapphire substrates with metalorganic chemical vapor deposition and subsequently hydride vapor-phase epitaxy techniques. The prepared samples are then chemically etched in molten potassium hydroxide, and microtunnels with triangularly etched cross sections are formed. The planes of the triangular bevels belong to the {11 (2) over bar2} family. The etch rate of the tunnel can be as high as 10 mu m/min under proper etching conditions. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
URI: http://dx.doi.org/10.1002/pssb.200674853
http://hdl.handle.net/11536/4619
ISSN: 0370-1972
DOI: 10.1002/pssb.200674853
期刊: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
Volume: 244
Issue: 6
起始頁: 1872
結束頁: 1876
Appears in Collections:Conferences Paper


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