標題: Oscillating voltage dependence of high-frequency impedance in magnetic tunneling junctions
作者: Chien, W. C.
Hsieh, L. C.
Peng, T. Y.
Lo, C. K.
Yao, Y. D.
Han, X. F.
Lin, P.
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: magnetic tunneling junctions (MTJs);oscillating voltage
公開日期: 1-Jun-2007
摘要: Oscillating voltage (V-Os), which depends on the frequency dependence of the magnetoimpedance (MI) effect, was applied to study a magnetic tunneling junction (MTJ) of Ru(5 mn)/Cu(10 nm)/Ru(5 nm)/IrMn(10 nm)/CoFeB(4 nm)/Al-2 O-3/CoFeB(4 nm)/Ru(5 nm) at frequencies up to 40 MHz. The MI ratio decreased as the V-Os. was increased. The MI ratio turned from positive to negative at a certain frequency. An equivalent circuit model was employed to analyze the results. The fact that MTJ can be regarded as the composition of a resistance component and two sets of parallel resistance (R) and capacitance (C) components in series has been utilized to describe the individual impedance contribution from the lead of cross pattern, barrier, and interface. The resistance (R-barrier) and capacitance (C-barrier) of the barrier effect are functions of V-Os. The R-barrier decreases as the V-Os increases, However, Cbarrier behaves the opposite way. The tendency is for interfacial resistance R-interface and interfacial capacitance C-interface to have opposite results with increasing V-Os. This work provides a detailed investigation of high-frequency transport behavior subjected to V-Os, especially useful for MTJ characterization.
URI: http://dx.doi.org/10.1109/TMAG.2007.893774
http://hdl.handle.net/11536/4541
ISSN: 0018-9464
DOI: 10.1109/TMAG.2007.893774
期刊: IEEE TRANSACTIONS ON MAGNETICS
Volume: 43
Issue: 6
起始頁: 2812
結束頁: 2814
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000246706200240.pdf