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dc.contributor.author徐瑩珈en_US
dc.contributor.authorHsu, Ying-Chiaen_US
dc.contributor.author李威儀en_US
dc.contributor.authorLee, Wei-Ien_US
dc.date.accessioned2015-11-26T01:05:14Z-
dc.date.available2015-11-26T01:05:14Z-
dc.date.issued2010en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT079721552en_US
dc.identifier.urihttp://hdl.handle.net/11536/45034-
dc.description.abstract本論文研究了在不同的蝕刻環境中經氫氣蝕刻後的氮化鎵表面及氫氣蝕刻機制。氫氣為一種對氮化鎵具蝕刻能力之氣體, 因而氮化鎵在不同的環境中會因氫氣蝕刻而出現不同的表面, 這些表面對後續氮化鎵磊晶成長可視為圖樣氮化鎵(pattern GaN), 具有釋放應力及降低線差排的效果。氫氣自氮化鎵表面最脆弱處開始蝕刻, 氫原子促使氮化鎵中的氮原子脫離而留下鎵原子, 由反應活化能的大小可判斷脫離的氮原子最終形成氮氣脫離。zh_TW
dc.description.abstractThe effects of hydrogen treatment on GaN surface and the etching mechanism are studied in this work. Hydrogen is a kind of gases with the ability to etch GaN, so different GaN surfaces appear under different etching conditions in hydrogen. These surfaces can be used as pattern GaN with the advantages of defect reducing and strain releasing in epitaxy process afterwards. The weaker points on GaN surface are etched by hydrogen first; the hydrogen atoms make the nitrogen atoms in GaN dissociated and Ga atoms left. Judging from the activation energy, the nitrogen atoms generated after GaN dissociation form into nitrogen and desorb from GaN surface.en_US
dc.language.isozh_TWen_US
dc.subject氮化鎵zh_TW
dc.subject氫氣處理zh_TW
dc.subject氫化物氣相磊晶zh_TW
dc.subjectGaN, gallium nitrideen_US
dc.subjecthydrogen treatmenten_US
dc.subjecthydride vapor phase epitaxy, HVPEen_US
dc.title氫氣處理對氮化鎵表面影響之研究zh_TW
dc.titleThe Effects of Hydrogen Treatment on GaN Surfaceen_US
dc.typeThesisen_US
dc.contributor.department電子物理系所zh_TW
Appears in Collections:Thesis


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