The Growth of Nonpolar GaN on Different Buffer Layers by Metalorganic Chemical Vapor Deposition
|摘要:||本論文利用有機化學氣相磊晶法成長非極性A 面氮化鎵於R 面藍寶石基板，並利用在高溫、低溫、高溫下成長的多層氮化鋁做為緩衝層接著成長約三微米的氮化鎵。將緩衝層改變不同的厚度和結構，觀察對氮化鎵有何影響，並藉由 X 射線繞射儀、掃描式電子顯微鏡及原子力顯微鏡來觀察來了解。最後，我們使用多層氮化鋁緩衝層加上氮化鋁鎵緩衝層得到高晶體品質、表面形貌佳的 A 面氮化鎵。|
In this work, we investigated the a-plane (11-20) GaN thin-film samples were grown on r-plane (10-12) sapphire by MOCVD, and the buffer layers were composed with AlN multi-layers which were grown on high temperature, low temperature, and high temperature (HLH-AlN), and then 3-um GaN was grown subsequently. We investigated the properties of a-plane GaN on different buffer layers. The surface morphology and roughness of the samples were examined by a scanning electron microscope (SEM) and atomic force microscope (AFM), and the crystal quality was investigated by X-ray rocking curve. Finally, an a-plane GaN with high quality and morphology was accomplished on the buffer layers with HLH-AlN combined with AlGaN.
|Appears in Collections:||Thesis|
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