Fabrication and Characterization of The Polycrystlline Nanowires Thin Fim Transistor with Novel Gate-All-Around Structure for Non-Volatie Memories
The novel gate-all-around thin-film transistor non-volatile memory devices are introduced. The thin-film transistor non-volatile memory has been widely investigated, especially in silicon/oxide/nitride/oxide/silicon (SONOS) structure, since there is a plenty of advantages such as low cost and high density array. To integrate gate-all-around structure to these devices is good idea to improve performance of non-volatile memory. In this work, the multi-channel nanowires-based gate-all-around thin-film transistor non-volatile memories have been fabricated successfully. The characteristics of thin-film transistors can be enhanced by multi-channel structure; moreover, gate-all-around structure also aid performance increasing. On the other hand, both dual gate structure and nanocrystal formation are also integrated to these devices, and the reliability can be improved significantly. For the future, this novel structure has much potential application. In this thesis, various analyses are provided to demonstrate some better properties in these devices. The structure of devices is confirmed by scanning electron microscopy and transmission electron microscopy images. Furthermore, high performance and reliability are exhibited by electrical and physical analysis.
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