The Characteristics of Anomalous Breakdown Strength in Magnetic FePt Nanodots MIS Capacitor
In the field of semiconductor, the main stream research is always on standard process, such as Si-based semiconductor, high-κmaterial, III-V compound semiconductor. However, the research of magnetic material applied in semiconductor is very rare. However, using magnetic effects into semiconductor, insulator, metal, superconductor related structures will open up a huge possibilities of new phenomena , new devices, new applications. In spite of that, we have found some novel characteristics in MIS capacitor with magnetic nanodot. This thesis we have found the anomalous breakdown strength and leakage of magnetic nanodot in insulator. We presented in two parts, one is focus on FePt magnetic films fabrication, the second is that embedded FePt magnetic nanodot in oxide in MIS structure. First, FePt and oxide are deposited layer by layer. After furnace annealing, FePt dispense in oxide and induce to vertical and parallel magnetic field. This Capacitor has the anomalous huge breakdown voltage about 49V was observed in MIS capacitors with 34 nm oxide layer. We can also find huge voltage strength and we try to explain this phenomenon by quantum mechanical simulations. On the other hand, fitting its leakage current density to find carrier transport mechanism .We also found that the wavefunction is localized under strong magnetic field in COMSOL simulation. Unfortunately, verification of leakage current reduces due to magnetic field has not been observed due to lack of comparison between second set of samples. It will be further explained in the future. The tunneling probability reduced result from magnetic field quantum confinement effect. Therefore, carriers transport with other model, which quantum respect could explain.