Characteristic of ZrO2-based 1T1R Resistive Switching Memory Device
Many types of consumer electronics products require high-capacity memory with the development of the technology, in which demanding for non-volatile memory is the largest. Flash memories face the issue of scale limit, so the research of next generation non-volatile memories is booming. The resistive switching random access memory (RRAM) have these advantages, such as high operation speed, low power consumption, high cell density, and lower scale limit and non-destructive readout, which have the opportunity to become the mainstream of next generation non-volatile memory. In this thesis, the research is focus on the electric characteristic of 1T1R device, and it divides two parts. First part, we used transistor as current limiter to improve the switching characteristic based on the ZrO2 thin films, and second part is the research of 1T1R based on the SrZrO3 thin films. In the first part, ZrO2-based 1T1R devices could efficiently control compliance current and lower the operation current to 25uA, operation voltage to 1.5V, which reach the advantage of low power consumption. In addition, 1T1R device have multistate operation in a single device due to the thickness and number of filaments which controlled by compliance current; there is no data loss at the nondestructive readout test for over 10000 seconds under 0.3V DC voltage; and retention test is 106s at room temperature. Next, size effect is also studied. As the area of ZrO2 thin films scale down (1um2), the resistance ration becomes larger. At LRS, the current is independent on the area, but at HRS, the current is decreasing following the scale down of the ZrO2 area. In the second part, 1T1R devices which are based on the e SrZrO3 thin films could have large resistance ration over 100 times.
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