標題: Highly sensitive focus monitoring on production wafer by scatterometry measurements for 90/65-nm node devices
作者: Kawachi, Toshihide
Fudo, Hidekimi
Iwata, Yoshio
Matsumoto, Shunichi
Sasazawa, Hideaki
Mori, Tadayoshi
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: focusing;photolithography;resists;scatterometry
公開日期: 1-Aug-2007
摘要: High performance analog (HPA) CMOS devices with multiple threshold voltages have been successfully fabricated in a 0.13-mu m logic-based mixed-signal CMOS process on a single chip. The HPA devices demonstrate superior drivability, dc gain, matching, and reliability using an optimized halo and lightly doped drain (LLD) engineering approach combined with a unique dual gate oxide module for aggressive gate oxide thickness scaling.
URI: http://dx.doi.org/10.1109/TSM.2007.901831
http://hdl.handle.net/11536/4296
ISSN: 0894-6507
DOI: 10.1109/TSM.2007.901831
期刊: IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
Volume: 20
Issue: 3
起始頁: 222
結束頁: 231
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000248669800006.pdf