標題: Active ESD protection circuit design against charged-device-model ESD event in CMOS integrated circuits
作者: Chen, Shih-Hung
Ker, Ming-Dou
電機學院
College of Electrical and Computer Engineering
公開日期: 1-Sep-2007
摘要: CDM ESD event has become the main ESD reliability concern for integrated-circuits products using nanoscale CMOS technology. A novel CDM ESD protection design, using self-biased current trigger (SBCT) and source pumping, has been proposed and successfully verified in 0.13-mu m CMOS technology to achieve 1-kV CDM ESD robustness. (C) 2007 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.microrel.2007.07.095
http://hdl.handle.net/11536/4218
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2007.07.095
期刊: MICROELECTRONICS RELIABILITY
Volume: 47
Issue: 9-11
起始頁: 1502
結束頁: 1505
Appears in Collections:Conferences Paper


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