標題: 可切換頻帶式低雜訊放大器之設計
Design of Band Switchable Low Noise Amplifiers
作者: 洪埜泰
Hung, Yeh-Tai
蔡尚澕
黃聖傑
Tsai, Shang-Ho
Huang, Sheng-Chieh
電控工程研究所
關鍵字: 低雜訊放大器;雙頻帶;切換電容;射頻;超寬頻;LNA;dual-band;switched capacitors;RF;UWB
公開日期: 2008
摘要: 兩個低雜訊放大器 (LNA) 被設計應用於超寬頻 (UWB) 與全球互運的微波存取 (Wi-MAX)。 所提出的應用於UWB無線接收機之雙頻帶低雜訊放大器有兩個可切換的頻帶。 此低雜訊放大器分別可以操作在 3.1-5GHz 和6-10.6GHz。 此設計包含了一個輸入匹配電路,兩個共源級放大器和使用來量測之輸出緩衝器。 並且分析輸入匹配電路設計步驟[9],此對我們設計輸入匹配電路很重要。 提出之低雜訊放大器擁有兩個使用NMOS當切換電容開關之負載以用來得到更好的品質因數(Q)。 此低雜訊放大器當使用1.8V電源供應器並且消耗功率22.46mW時分別提供10.8dB和16.8dB之增益與6.2dB和6.5dB之雜訊指標在3.25-5.6GHz和6-10.4GHz。 基於UWB可切換頻帶式低雜訊放大器之開關電路我們設計一個新的應用於四個頻帶之Wi-MAX低雜訊放大器之開關電路。 此低雜訊放大器分別可以操作在2.3GHz, 2.5GHz, 3.5GHz 和5.8GHz。 此提出之低雜訊放大器是由一個寬頻的輸入匹配電路, 一個NMOS連接到地之開關電路, 一個共源級放大器和使用來量測之輸出緩衝器構成。 模擬結果表現此增益分別為10.1dB, 11.1dB, 13.5dB和15.3dB在2.3GHz, 2.5GHz, 3.5GHz 和5.8GHz。 此雜訊指標分別為4dB, 3.5dB, 2.8dB和3.4dB在2.3GHz, 2.5GHz, 3.5GHz 和5.8GHz。 此功率消耗為11.5mW在一個1.5V之電源供應器下。此低雜訊放大器也使用台積電 0.18微米互補式金氧半導體科技。
Two band switchable low noise amplifiers (LNA) are designed for ultrawideband (UWB) and Worldwide Interoperability for Microwave Access (Wi-MAX) applications. The proposed dual-band LNA for UWB wireless receiver has two switchable bands. This LNA can operate at both 3.1-5GHz and 6-10.6GHz frequency bands. The design consists of a input matching circuit, two cascode common-source amplifiers and an output buffer for measurement. Moreover, we give a procedure to analyze the input matching circuit [9], which is important for input matching design. The proposed LNA is designed with two loadings of switched capacitors which use NMOS in order to make high quality factor (Q). The LNA gives 10.8dB and 16.8dB gain, 6.2dB and 6.5dB noise figure at 3.25-5.6GHz and 6-10.4GHz frequency band while consuming 22.46mW through a 1.8V supply using the TSMC 0.18μm CMOS technology. Based on the switch circuit of band switchable UWB LNA the new switch circuit is also designed for of band switchable Wi-MAX LNA. The LNA operates at 2.3GHz, 2.5GHz, 3.5GHz and 5.8GHz. The proposed LNA consists of a wideband input matching circuit, a NMOS connected to ground switch circuit, a common-source amplifiers and an output buffer for measurement. The simulation result shows that the gain is 10.1dB, 11.1dB, 13.5dB and 15.3dB at 2.3GHz, 2.5GHz, 3.5GHz and 5.8GHz, respectively. NF is 4dB, 3.5dB, 2.8dB and 3.4dB at 2.3GHz, 2.5GHz, 3.5GHz and 5.8GHz, respectively. The power consumption is 11.5mW with 1.5V power supply. The LNA also uses TSMC 0.18μm CMOS technology.
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT079612530
http://hdl.handle.net/11536/41847
Appears in Collections:Thesis


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