標題: Effects of floating-gate doping concentration on flash cell performance
作者: Huang, TY
Jong, FC
Lin, HC
Chao, TS
Leu, LY
Young, K
Lin, CH
Chiu, KY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: flash;EEPROM;floating-gate doping;horn-shaped floating-gate;interpoly oxide
公開日期: 1-八月-1997
摘要: In this paper we report the effects on flash cell performance of the doping concentration of the horn-shaped floating-gate. It is demonstrated that the Boating-gate doping concentration not only determines the work function of the floating-gate, but also affects the resultant interpoly oxide. As a result, the Bash cell performance is affected by the Boating-gate doping concentration, and should therefore be carefully designed. It is shown that a low doping level (e.g., <1.7x10(18) cm(-3)) on the Boating-gate results in a high threshold voltage of the flash cell, low cell read current, and degraded write/erase cycling endurance. Flash cells with a medium (e.g., 1.7 x 10(19) cm(-3)) doping level, on the other hand, depict the lowest threshold voltage, and the highest cell read current; while Bash cells with the highest doping level (1.7x10(20) cm(-3)) used in this study depict a medium threshold voltage. This could be ascribed to the fact that both medium and high doping levels result in a degenerate polysilicon floating-gate with a similar work function; however, a higher doping concentration results in a thicker interpoly oxide, and therefore a higher threshold voltage, and lower read current.
URI: http://hdl.handle.net/11536/418
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 36
Issue: 8
起始頁: 5063
結束頁: 5067
顯示於類別:期刊論文


文件中的檔案:

  1. A1997XW34300009.pdf