標題: The characteristics of polysilicon oxide grown on amorphous silicon deposited from disilane
作者: Lin, YM
Lei, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: polyoxide;disilane;amorphous silicon;AFM;Q(bd)
公開日期: 1-八月-1997
摘要: The characteristics of polysilicon oxide (polyoxide) grown on amorphous silicon deposited from disilane as the silicon source are reported on. The rate of amorphous silicon deposition from disilane is comparable to that of polysilicon deposition from silane. Moreover, the obtained polyoxide has the desirable electrical characteristics of lower leakage current and higher breakdown held than those of polyoxide grown on polysilicon deposition from silane, urgently needed for nonvolatile memory application. At the same time! the grown polysilicon oxides have lower electron trapping rates and larger charge-to-breakdown (Q(bd)), both attributable to their smoother polyoxide/polysilicon-1 interface than those of polyoxides grown on polysilicon deposition from silane.
URI: http://hdl.handle.net/11536/417
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 36
Issue: 8
起始頁: 5040
結束頁: 5043
顯示於類別:期刊論文


文件中的檔案:

  1. A1997XW34300004.pdf