標題: Process-variation- and random-dopants-induced threshold voltage fluctuations in nanoscale CMOS and SOI devices
作者: Li, Yiming
Yu, Shao-Ming
Chen, Hung-Ming
資訊工程學系
電信工程研究所
Department of Computer Science
Institute of Communications Engineering
關鍵字: threshold voltage fluctuation;random dopant;process-variation;gate-length deviation;line-edge roughness;modeling and simulation
公開日期: 1-Sep-2007
摘要: In this paper, we investigate the threshold voltage fluctuation for nanoscale metal-oxide-semiconductor field effect transistor (MOSFET) and silicon-on-insulator (SOI) devices. The threshold voltage fluctuation comes from random dopant and short channel effects. The ran dom-dopant- induced fluctuation is due to the random nature of ion implantation. The gatelength deviation and the line-edge roughness are mainly resulted from the short-channel effect. For the SOI devices, we should also consider the body thickness variation. In our investigation, the metal gate with high-K material MOSFET is a good choice to reduce fluctuation of threshold voltage when comparing to the poly gate MOSFET and thin-body SOI devices.
URI: http://dx.doi.org/10.1016/j.mee.2007.04.059
http://hdl.handle.net/11536/4107
ISSN: 0167-9317
DOI: 10.1016/j.mee.2007.04.059
期刊: MICROELECTRONIC ENGINEERING
Volume: 84
Issue: 9-10
起始頁: 2117
結束頁: 2120
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000247378600065.pdf