Novel Application of Non-homogeneous SiGe Nanowire for Highly Sensitive Biosensor
Si nanowire has attracted a lot of attention and been studied to a great extent. It is considered as one of the most promising candidate for chemical or biological sensing application. In our previous study, we successfully demonstrated the sensing capability of SiGe nanowire-based bio-sensor. In this thesis, p-type and n-type SiGe and Si nanowires were fabricated by sidewall spacer formation, which is compatible to VLSI technology. The changes of electrical characteristics of nanowires corresponding to APTMS and BS3 modification were studied. Then we proposed a non-homogeneous structure to improve sensing capability. Non-homogenous SiGe nanowires were fabricated by Ge condensation technique. Thermal process was investigated and discussed. In this study, 900℃ annealing for 30 minutes after oxidation led to highest conductance change and sensitivity. Also, we proved that non-homogeneous SiGe nanowire exhibited higher response than homogeneous SiGe nanowire.
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