標題: Improvement of water-related hot-carrier reliability by optimizing the plasma-enhanced tetra-ethoxysilane deposition process
作者: Lin, YM
Jang, SM
Yu, CH
Lei, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-八月-1997
摘要: As-deposited, steam-exposed O-3-tetra-ethoxysilane (TEOS)-based intermetallic dielectric were characterized according to the LR-absorption spectra. The plasma-enhanced-TEOS films investigated here were formed by mixed-frequency plasma processes and differentiated by reaction oxidizers and/or plasma powers. Increasing stress and nitrogen or oxygen concentrations improved the moisture resistance of PE-TEOS oxide films. In addition to the moisture resistance of PE-TEOS films, another factor affecting hot-carrier robustness is the maximum thickness of the underlayer for O-3-TEOS films, which is limited by their conformity The integrated intermetallic dielectrics were evaluated by constant-current and hot-carrier stressing. In obtaining the best device reliability, a trade-off exists between moisture resistance, gapfilling capacity of the PE-TEOS underlayer, and plasma damage. Our results indicate that an O-2-rich, PE-TEOS film with a mechanical stress of 3 x 10(9) dyn/cm(2) is the optimum.
URI: http://hdl.handle.net/11536/406
ISSN: 0013-4651
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 144
Issue: 8
起始頁: 2898
結束頁: 2903
顯示於類別:期刊論文


文件中的檔案:

  1. A1997XT45300058.pdf