標題: Formation and nonvolatile memory characteristics of W nanocrystals by in-situ steam generation oxidation
作者: Chen, Shih-Cheng
Chang, Ting-Chang
Hsieh, Chieh-Ming
Li, Hung-Wei
Sze, S. M.
Nien, Wen-Ping
Chan, Chia-Wei
Yeh (Huang), Fon-Shan
Tai, Ya-Hsiang
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
關鍵字: Tungsten;Nonvolatile memory;Nanocrystals;In-situ stem generation
公開日期: 30-Dec-2010
摘要: The authors provide the formation and memory effects of W nanocrystals nonvolatile memory in this study. The charge trapping layer of stacked a-Si and WSi(2) was deposited by low pressure chemical vapor deposition (LPCVD) and was oxidized by in-situ steam generation system to form uniform W nanocrystals embedded in SiO(2). Transmission electron microscopy analyses revealed the microstructure in the thin film and X-ray photon-emission spectra indicated the variation of chemical composition under different oxidizing conditions. Electrical measurement analyses showed the different charge storage effects because the different oxidizing conditions influence composition of trapping layer and surrounding oxide quality. Moreover, the data retention and endurance characteristics of the formed W nanocrystal memory devices were compared and studied. The results show that the reliability of the structure with 2% hydrogen and 98% oxygen at 950 degrees C oxidizing condition has the best performance among the samples. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2010.08.167
http://hdl.handle.net/11536/4018
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2010.08.167
期刊: THIN SOLID FILMS
Volume: 519
Issue: 5
起始頁: 1677
結束頁: 1680
Appears in Collections:Conferences Paper


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