標題: Advance in next Century nanoCMOSFET research
作者: Hwang, Huey-Liang
Chiou, Yan-Kai
Chang, Che-Hao
Wang, Chen-Chan
Lee, Kun-Yu
Wu, Tai-Bor
Kwo, Raynien
Hong, Minghwei
Chang-Liao, Kuei-Shu
Lu, Chun-Yuan
Lu, Chun-Chang
Chiu, Fu-Chien
Chen, Chun-Heng
Lee, Joseph Ya-Min
Chin, Albert
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: nano;MOSFET;high-k dielectric;metal gate
公開日期: 31-Oct-2007
摘要: It is well known that Taiwan's IC industry is in the very leading front of the world, and production of 65 nm devices was launched in 2006. Within a few years, the need of high-k dielectrics and metal gates is eminent and truly indispensable. Professor H.L. Hwang (the author) organized 12 professors and 50 graduate students of National Tsing Hua University and Chiao Tung University, and executed this particular project, which is sponsored by the Ministry of Economic Affairs of Republic of China, and is aimed at treating efficiently this problem and transferred the critical technologies to industry in a time frame of 3 years. (C) 2007 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.apsusc.2007.07.117
http://hdl.handle.net/11536/3896
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2007.07.117
期刊: APPLIED SURFACE SCIENCE
Volume: 254
Issue: 1
起始頁: 236
結束頁: 241
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000250800100053.pdf