Improvement of GaAs Solar Cell efficiency by Micro-hole Array surface texture fabrication
III-V compound semiconductor solar cell was fabricated and studied in the thesis. With an aim to improve the conversion efficiency, the InGaP p-n junction top cell was firstly fabricated by a new surface treatment of micro-hole array surface texture process. The periods of micro-hole array were arranged to be 5, 10, 15 and 20 □m, respectively. The conversion efficiency of the top InGaP p-n junction solarcell could be improved by micro-hole array surface texture process. It was found that with 5um micro hole array period, the efficiency was improved from 13.86% (standard process) to 15.93% while a single-layer SiO2 anti-reflection coating film was evaporated. To further improve the InGaP solar cell conversion efficiency, we had also used double-layer TiO2/MgF2 anti-reflection coating film, and we found that the efficiency was improved to 16.28% efficiency under AM 1.5g illumination. Secondly, the fabrication of GaAs p-n junction solar cell was studied. We also tried to improve the conversion efficiency of the GaAs solar cell when the cell was under high illumination concentration. A conversion efficiency of 22.68% (AM 1.5g 100 mW/cm2 25 ˚C) was achieved by using a 2.9% metal shielding mask design. To improve the conversion efficiency of the GaAs solar cell when the cell was under high illumination concentration, a radiative pattern for the metal grid was designed and the GaAs solar cell was measured under 1-sun to 200-suns. The conversion efficiency of the GaAs solar cell was increased with increased concentration ratio. A maximum conversion efficiency of ~28.1% was obtained.
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