標題: 含自組裝矽量子點之奈米孔洞氧化矽複合材料閘極之非揮發記憶體
Nonvolatile memory with gate of self-assembled nanostructures of silicon quantum-dots in mesoporos silica
作者: 黃建達
Jian-Da Huang
郭浩中
盧廷昌
Hao-Chung Kuo
Tien-Chang Lu
光電工程學系
關鍵字: 非揮發記憶體;氧化矽複合材料;矽量子點;Nonvolatile memory;mesoporos silica;silicon quantum-dot
公開日期: 2007
摘要: 在本篇論文中,利用將零維度矽奈米微晶埋藏於自我組裝奈米孔洞氧化矽模版中,展示了新型態的人工製造類鐵電材料,我們將量測到的極化場歸因於奈米晶粒與二氧化矽模板間非對稱介面鍵結感應電子極矩所產生。我們也將此種材料替換金-氧-半場效電晶體的閘極介電層,展示了高度的潛力應用在矽基非揮發鐵電記憶體。
In this thesis, a new class of artificially engineered ferroelectric-like materials synthesized by embedding three-dimensional arrays of Si nanocrystals in mesoporous silica matrix was reported. We attribute the measured polarization switching to polar layers lying at the interfaces between one-side bonded Si nanocrystals and mesoporous silica matrix. A metal-oxide-semiconductor field-effect transistor with the ferroelectric-like material in place of the gate dielectrics was fabricated to demonstrate its high potential for the silicon-based nonvolatile random-access memories.
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT009524542
http://hdl.handle.net/11536/38919
Appears in Collections:Thesis


Files in This Item:

  1. 454201.pdf