標題: CHARACTERIZATION OF IMPROVED ALGAAS/GAAS RESONANT TUNNELING HETEROSTRUCTURE BIPOLAR-TRANSISTORS
作者: WU, JS
CHANG, CY
LEE, CP
CHANG, KH
LIU, DG
LIOU, DC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: RESONANT TUNNELING;TRANSFER CHARACTERISTICS;PEAK-TO-VALLEY CURRENT RATIO;NEGATIVE DIFFERENTIAL RESISTANCE;COMMON-EMITTER SMALL SIGNAL CURRENT GAIN
公開日期: 1-二月-1991
摘要: We report on the fabrication of AlGaAs/GaAs resonant tunneling heterostructure bipolar transistors (RTHBT's). The devices exhibit a current peak in the transfer characteristics, with peak-to-valley current ratios of 1.7 and 9 at 300 K and 77 K, respectively. The common-emitter small signal current gains at 300 K and 77 K reach 40 and 28, respectively. They are the best results to date for AlGaAs/GaAs resonant tunneling transistors. Because the double barriers are placed in the emitter and far from the emitter-base interface, and the heterostructure emitter suppresses the hole injection from the base to the emitter, the occurrence of the negative differential resistance (NDR) in the device characteristics is governed by the emitter current but not by the base current. The operation mechanism of the NDR behavior in the common-emitter output characteristics is discussed.
URI: http://dx.doi.org/10.1143/JJAP.30.L160
http://hdl.handle.net/11536/3875
ISSN: 0021-4922
DOI: 10.1143/JJAP.30.L160
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 30
Issue: 2A
起始頁: L160
結束頁: L162
顯示於類別:期刊論文


文件中的檔案:

  1. A1991EW57200008.pdf