標題: INVESTIGATION OF INDIUM DOPING AND INCORPORATION IN ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES
作者: WU, JS
CHANG, KH
LEE, CP
CHANG, CY
LIU, DG
LIOU, DC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: SEMICONDUCTOR DEVICES;TUNNELING STRUCTURES
公開日期: 28-二月-1991
摘要: In doping and incorporation in the barrier layers of AlGaAs/GaAs double-barrier resonant tunnelling structures (DBRTSs) have been studied. It was found that the peak-to-valley current ratio (PVCR) can be improved by the proper amount of In doping. This is attributed to the improvement in the quality of the AlGaAs barrier layers due to the high surface migration rate of In atoms that reduces group III vacancies. Also pseudomorphic In(x)(Al0.5Ga0.5)(1-x)As/GaAs (x = 0.12) strained-layer DBRTSs have been fabricated by incorporating a sufficient amount of In into the AlGaAs barrier layers. PVCRs as high as 27.5 at 77 K have been obtained. This is the first realisation of such DBRTSs with lattice-mismatched quaternary barrier layers.
URI: http://hdl.handle.net/11536/3860
ISSN: 0013-5194
期刊: ELECTRONICS LETTERS
Volume: 27
Issue: 5
起始頁: 428
結束頁: 430
顯示於類別:期刊論文