標題: Novel coexisted sol-gel derived poly-Si-oxide-nitride-oxide-silicon type memory
作者: You, Hsin-Chiang
Wu, Chi-Chang
Ko, Fu-Hsiang
Lei, Tan-Fu
Yang, Wen-Luh
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Nov-2007
摘要: The authors use a very simple sol-gel spin coating method at 900 degrees C and 1 min rapid thermal annealing to fabricate three different poly-Si-oxide-nitride-oxide-silicon-type flash memories. The memory windows estimated from the curve of drain current versus applied gate voltage are 3, 3.3, and 4 V for (i) HfO2 thin film, (ii) hafnium silicate nanocrystal, and (iii) coexisted hafnium silicate and zirconium silicate nanocrystal memory, respectively. Together with the measurement from gate disturbance and drain disturbance on these fabricated devices, the coexisted nanocrystal devices exhibit better reliability than both the thin film type memory and single nanocrystal type memory. (C) 2007 American Vacuum Society.
URI: http://dx.doi.org/10.1116/1.2794327
http://hdl.handle.net/11536/3852
ISSN: 1071-1023
DOI: 10.1116/1.2794327
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 25
Issue: 6
起始頁: 2568
結束頁: 2571
Appears in Collections:Conferences Paper


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