標題: ENHANCEMENT OF CF4 AND O2 REACTIVE ION ETCHING RESISTANCE OF POLY(BUTENE-1 SULFONE) BY N2 PLASMA PRETREATMENT
作者: LOONG, WA
CHANG, HW
交大名義發表
應用化學系
National Chiao Tung University
Department of Applied Chemistry
關鍵字: PLASMAS;PHOTOLITHOGRAPHY;SEMICONDUCTOR DOPING;SEMICONDUCTOR GROWTH
公開日期: 14-三月-1991
摘要: The resistance of poly(butene-1 sulfone) (PBS) to CF4 and oxygen reactive ion etching is greatly enhanced by low power nitrogen plasma pretreatment. The original thickness of PBS can be maintained.
URI: http://hdl.handle.net/11536/3837
ISSN: 0013-5194
期刊: ELECTRONICS LETTERS
Volume: 27
Issue: 6
起始頁: 541
結束頁: 542
顯示於類別:期刊論文


文件中的檔案:

  1. A1991FD31200038.pdf