Characterization and SPICE Modeling of Lateral Diffused MOS by using a Novel Metal Contact Structure
|關鍵字:||高壓元件;平面二次擴散之金氧半場效電晶體;SPICE模型;自發熱效應;內部電壓;Lateral Diffused MOS;SPICE Model;Slef-Heating Effect;Internal Voltage|
|摘要:||在此論文中，將觀察自發熱效應(self-heating effect)所引發的內部電壓(internal voltage)退化現象。我們提出一個具有特殊接觸電極之LDMOS(橫向兩次擴散之金氧半場效電晶體)結構，藉以量測高閘極脈波造成之內部電壓暫態變化。接著，我們將自發熱效應所造成之內部電壓退化與集極電流退化情形作一比較，最後證明內部電壓是觀察自發熱效應之較好方法。
Self-heating induced internal voltage degradation is observed. A novel lateral diffused MOS transistor with an additional metal contact for internal voltage measurement is introduced. An internal voltage transient at high gate voltage pulse is measured. A comparison of self-heating characterization by the internal voltage method and the conventional drain current method is presented. The internal voltage method is demonstrated to be more sensitive than drain current method for self-heating characterization. A two-component VI-based LDMOS SPICE model including self-heating effect is proposed. Our model accurately depicts the LDMOS drain current transient at high gate voltage pulse, demonstrating successful use of the self-heating model. Modeling results of the self-heating and non-self-heating currents at various VG and VD are also shown.
|Appears in Collections:||Thesis|
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