標題: 非對稱輕摻雜汲極金屬氧化半導體電晶體應用於2.4GHz 射頻功率放大器
A 2.4GHz RF CMOS Power Amplifier Using High Breakdown Voltage Asymmetric-LDD MOS Transistors
作者: 陳膺任
Ying Jen Chen
荊鳳德
Albert Chin
電子研究所
關鍵字: 功率放大器;互補式金屬氧化半導體;CMOS;power amplifier;PA;LDD;Class AB;2.4GHz
公開日期: 2007
摘要: 本論文展示了一種以非對稱輕摻雜汲極金氧半體電晶體作為功率單元的2.4GHz 射頻功率放大器架構,該放大器可完全以TSMC 0.18um的CMOS一般製程環境來實現。這個設計可以穩定的操作在2.5V ~ 2.75V,而不需使用串接電路。較高的操作電壓使得電路有優越的功率特性,根據晶片實際量測的結果,2.5V 工作電壓條件下,功率增益達20dB,功率增加效率(PAE)達30%,2.75V的工作電壓條件下,輸出功率P1dB可達21.5dBm 飽和輸出功率可達23.2dBm,並且測得W-CDMA π/4 QPSK調變下,鄰近通道功率比在15dBm的輸出功率為-41dBc,與大約36dBm的輸出三階互調截點(OIP3)。
This thesis presents a 2.4 GHz RF CMOS power amplifier based on two stages amplifiers topology with asymmetric-lightly-doped-drain (LDD) CMOS power cell which is fully embedded in the conventional foundry logic process with only one additional mask but without extra process step. The power amplifier can achieved higher output power and higher power-added efficiency (PAE) and novel linearity. The simulation result demonstrated 20dB power gain, and 30% PAE with 2.5V supply voltage, 21.5dBm at 1-dB compression point (P1dB), 23.2dBm saturate output power, -41dBc ACPR at 15dBm output power point with standard W-CDMA π/4 QPSK modulation , and ~36dBm OIP3 with 2.75V supply voltage.
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT009511522
http://hdl.handle.net/11536/38064
Appears in Collections:Thesis


Files in This Item:

  1. 152201.pdf