標題: EFFECT OF BACK-GATE BIAS ON TUNNELING LEAKAGE IN A GATED P+-N DIODE
作者: CHEN, MJ
交大名義發表
電控工程研究所
National Chiao Tung University
Institute of Electrical and Control Engineering
公開日期: 1-五月-1991
摘要: On a thin-oxide gate-controlled p+-n diode, this work first exhibits experimentally not only the substrate-bias-dependent characteristics of the tunneling leakage current but also the tunneling leakage characteristics independent of the substrate bias. This observation can be reasonably explained by the nature of the modulation of the surface space-charge region over the heavily doped p+ region as well as over the n-type substrate. Based on this work, the original understanding of such tunneling leakage has been improved.
URI: http://hdl.handle.net/11536/3804
ISSN: 0741-3106
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 12
Issue: 5
起始頁: 249
結束頁: 251
顯示於類別:期刊論文


文件中的檔案:

  1. A1991FJ40000020.pdf